Electrical Properties of Nb-Doped TiO2 Thin Films Deposited by Co-sputtering Process
tr. 44-50
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2017
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oai:112.137.131.14:VNU_123-605442017-12-05T20:02:14Z Electrical Properties of Nb-Doped TiO2 Thin Films Deposited by Co-sputtering Process Hoang, Ngoc Lam Huong Nguyen, Minh Hieu Nguyen, Thi Tien Nguyen, Tran Thuat Nguyen, Hoang Luong Electrical Properties Nb-Doped TiO2 transparent conducting Co-sputtering Process tr. 44-50 Nb-doped Ti thin films were fabricated by co-sputtering of TiO2 doped 6 at% by Nb2O5 and Nb targets. The anatase polycrystalline thin films were obtained by post-annealing at 350oC in vacuum atmosphere. The electrical properties of the films were determined by the Hall method using standard clove-leaf geometry. When the Nb concentration increased, the number of electron increased from 4×1018 cm-3 to 2.4×1020 cm-3, while the resistivity fell down from 10 to 3.5×10-3 Ωcm. It means that this co-sputtering process can be considered as a method to improve conducting properties of Nb:Ti thin films. With low resistivity and high optical transmittance (higher than 80% in the visible range), the fabricated thin films can be applicable for transparent electrodes or heat-resistant coating. 2017-12-05T03:14:32Z 2017-12-05T03:14:32Z 2017 Article 2588-1124 http://repository.vnu.edu.vn/handle/VNU_123/60544 other Tập 33;Số 3 application/pdf ĐHQGHN |
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Đại học Quốc Gia Hà Nội |
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Electrical Properties Nb-Doped TiO2 transparent conducting Co-sputtering Process |
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Electrical Properties Nb-Doped TiO2 transparent conducting Co-sputtering Process Hoang, Ngoc Lam Huong Nguyen, Minh Hieu Nguyen, Thi Tien Nguyen, Tran Thuat Nguyen, Hoang Luong Electrical Properties of Nb-Doped TiO2 Thin Films Deposited by Co-sputtering Process |
description |
tr. 44-50 |
format |
Article |
author |
Hoang, Ngoc Lam Huong Nguyen, Minh Hieu Nguyen, Thi Tien Nguyen, Tran Thuat Nguyen, Hoang Luong |
author_facet |
Hoang, Ngoc Lam Huong Nguyen, Minh Hieu Nguyen, Thi Tien Nguyen, Tran Thuat Nguyen, Hoang Luong |
author_sort |
Hoang, Ngoc Lam Huong |
title |
Electrical Properties of Nb-Doped TiO2 Thin Films Deposited by Co-sputtering Process |
title_short |
Electrical Properties of Nb-Doped TiO2 Thin Films Deposited by Co-sputtering Process |
title_full |
Electrical Properties of Nb-Doped TiO2 Thin Films Deposited by Co-sputtering Process |
title_fullStr |
Electrical Properties of Nb-Doped TiO2 Thin Films Deposited by Co-sputtering Process |
title_full_unstemmed |
Electrical Properties of Nb-Doped TiO2 Thin Films Deposited by Co-sputtering Process |
title_sort |
electrical properties of nb-doped tio2 thin films deposited by co-sputtering process |
publisher |
ĐHQGHN |
publishDate |
2017 |
url |
http://repository.vnu.edu.vn/handle/VNU_123/60544 |
work_keys_str_mv |
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