Near-band-edge emission of mechanically milled and thermally annealed ZnO:Ge particles
This paper reports a novel way for the synthesis of Ge-doped ZnO particles by a mechanically milled Ge and ZnO powder mixture (ZnO:Ge) followed by thermal annealing in Ar + 5%H2 to achieve near-band-edge (NBE) emission of ZnO with controllable intensities. The Ge-doped ZnO particles were synthesized...
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oai:localhost:PNK-1882022-08-17T05:54:39Z Near-band-edge emission of mechanically milled and thermally annealed ZnO:Ge particles HN Van CX Thang TTH Tam VTN Minh VH Pham This paper reports a novel way for the synthesis of Ge-doped ZnO particles by a mechanically milled Ge and ZnO powder mixture (ZnO:Ge) followed by thermal annealing in Ar + 5%H2 to achieve near-band-edge (NBE) emission of ZnO with controllable intensities. The Ge-doped ZnO particles were synthesized by mechanical milling of a ZnO and Ge powder mixture up to 50 h in particularly, using different ZnO:Ge ratios and annealing temperatures. The Ge-doped ZnO particles were observed to have a rounded morphology with a diameter of ~500 nm when an annealing temperature of 1000°C was used. The Ge-doped ZnO particles showed NBE emission of ~380 nm with a suppressed visible band of ~500 nm as a function of the Ge content and annealing temperatures. These results suggest that the current method is very useful for synthesis of Ge-doped ZnO particles to obtain NBE emission, which is of particular importance for potential application in the optoelectronic and UV detector field. 2020-04-29T07:52:01Z 2020-04-29T07:52:01Z bccb00122 https://dlib.phenikaa-uni.edu.vn/handle/PNK/188 https://elibrary.ru/item.asp?id=38592099 application/pdf |
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This paper reports a novel way for the synthesis of Ge-doped ZnO particles by a mechanically milled Ge and ZnO powder mixture (ZnO:Ge) followed by thermal annealing in Ar + 5%H2 to achieve near-band-edge (NBE) emission of ZnO with controllable intensities. The Ge-doped ZnO particles were synthesized by mechanical milling of a ZnO and Ge powder mixture up to 50 h in particularly, using different ZnO:Ge ratios and annealing temperatures. The Ge-doped ZnO particles were observed to have a rounded morphology with a diameter of ~500 nm when an annealing temperature of 1000°C was used. The Ge-doped ZnO particles showed NBE emission of ~380 nm with a suppressed visible band of ~500 nm as a function of the Ge content and annealing temperatures. These results suggest that the current method is very useful for synthesis of Ge-doped ZnO particles to obtain NBE emission, which is of particular importance for potential application in the optoelectronic and UV detector field. |
| author2 |
CX Thang |
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CX Thang HN Van |
| author |
HN Van |
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HN Van Near-band-edge emission of mechanically milled and thermally annealed ZnO:Ge particles |
| author_sort |
HN Van |
| title |
Near-band-edge emission of mechanically milled and thermally annealed ZnO:Ge particles |
| title_short |
Near-band-edge emission of mechanically milled and thermally annealed ZnO:Ge particles |
| title_full |
Near-band-edge emission of mechanically milled and thermally annealed ZnO:Ge particles |
| title_fullStr |
Near-band-edge emission of mechanically milled and thermally annealed ZnO:Ge particles |
| title_full_unstemmed |
Near-band-edge emission of mechanically milled and thermally annealed ZnO:Ge particles |
| title_sort |
near-band-edge emission of mechanically milled and thermally annealed zno:ge particles |
| url |
https://dlib.phenikaa-uni.edu.vn/handle/PNK/188 https://elibrary.ru/item.asp?id=38592099 |
| work_keys_str_mv |
AT hnvan nearbandedgeemissionofmechanicallymilledandthermallyannealedznogeparticles |
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